| PART |
Description |
Maker |
| APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| RJK6011DJE-15 |
600V - 0.1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6032DPD-00J2 RJK6032DPD-15 |
600V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S2DPP-E0 RJK60S2DPP-E0-T2 |
600V - 8A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6015DPM-00T1 |
600V - 21A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S5DPP-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S3DPD-00J2 |
600V - 12A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S8DPK-M0 RJK60S8DPK-M0-T0 |
600V - 110A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S2DPP-E0 RJK60S2DPP-E0T2 |
600V - 10A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 30ETH06 30ETH06-1 30ETH06S |
Hyperfast Rectifier
600V 30A HyperFast Discrete Diode in a TO-220AC package
600V 30A HyperFast Discrete Diode in a TO-262 package
600V 30A HyperFast Discrete Diode in a D2-Pak (UltraFast) package
|
IRF[International Rectifier]
|
| 2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
